page . 1 may 10,2010-rev.01 PJP8N60 / pjf8n60 fea tures ? 8a , 600v, r ds(on) =1.2 @v gs =10v, i d =4.0a ? low on resistance ? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctives mechanical da ta ? ca se: t o-220ab / it o-220ab molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 600v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note: 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice gate drain source to-220ab / ito-220ab to-220ab ito-220ab internal schematic diagram 1 2 3 g d s 1 2 3 g d s type marking package packing PJP8N60 p8n60 to-220ab 50pcs/tube pj f8n60 f8n60 ito-220ab 50pcs/tube pa ra m e te r s ym b o l p j p 8 n6 0 p j f 8 n6 0 uni ts d r a i n- s o ur c e vo lta g e v d s 6 0 0 v g a te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 8 8 a p uls e d d r a i n c urr e nt 1 ) i d m 3 2 3 2 a m a xi m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t a =2 5 o c p d 1 2 5 1 .0 4 5 0 .3 9 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c a valanche energy with single pulse i as =8.0a, vdd=50v, l=15.6mh e a s 5 0 0 m j junction-to-case thermal resistance r j c 1 2 .7 8 o c /w j unction-to ambient thermal resistance r j a 6 2 .5 1 0 0 o c /w
page . 2 PJP8N60 / pjf8n60 electrical characteristics ( t a =25 o c unless otherwise noted ) note: plus te st : pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 6 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 4.0 a - 1.0 1.2 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds =600v, v gs =0v - - 10 ua ga te body leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s =4 8 0 v, i d = 8 a v gs =1 0 v - 2 2 .8 - nc g a te - s o ur c e c ha rg e q g s - 5 .6 - ga te - d r a i n c ha r g e q g d - 7.6 - tu r n- on d e la y ti me t d (o n) v dd =300v,i d = 8 a v gs =10v, r g =25 - 13.2 18 ns t ur n- on ri s e ti m e t r - 18.4 32 tu r n- off d e la y ti me t d (o ff) - 4 6 .8 6 5 tu r n- off f a ll ti m e t f - 2 0 .8 3 0 in p ut c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f= 1 .0 mh z - 11 6 5 1 4 8 0 p f o utp ut c a p a c i t a nc e c o s s - 108 160 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 10 18 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 8 .0 a ma x.p uls e d s o ur c e c urr e nt i s m - - - 3 2 a d i o d e f o r wa r d vo lta g e v s d i s = 8 a , v gs =0 v - - 1 .4 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f = 8 a d i /d t=1 0 0 a /us - 3 5 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 3 .2 - uc may 10,2010-rev.01
fig.1 output characteristric PJP8N60 / pjf8n60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.2 transfer characteristric 0 1 2 3 4 3 4 5 6 7 8 9 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d = 4.0a t j = 25 o c 0 2 4 6 8 1 0 1 2 14 16 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20v~ 6.0v 5.0v 0 0 . 5 1 1.5 2 2.5 3 0 4 8 12 16 20 r ds(on) - on resistance( ) i d - drain current (a) v g s = 20v v g s = 10v 0.01 0 . 1 1 10 100 1 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s = 50v t j = 125 o c 25 o c -55 o c fig.1 output characteristric PJP8N60 / pjf8n60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.2 transfer characteristric fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage fig.5 on resistance vs junction temperature fig.6 capacitance page. 3 0 40 0 800 1200 1600 2000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c f = 1mhz v g s = 0v c c ciss c rs s coss 0.4 0. 8 1.2 1.6 2 2.4 2.8 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c ) v g s = 10 v i d =4.0a 0 1 2 3 4 3 4 5 6 7 8 9 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d = 4.0a t j = 25 o c 0 2 4 6 8 1 0 1 2 14 16 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 20v~ 6.0v 5.0v 0 0 . 5 1 1.5 2 2.5 3 0 4 8 12 16 20 r ds(on) - on resistance( ) i d - drain current (a) v g s = 20v v g s = 10v 0.01 0 . 1 1 10 100 1 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s = 50v t j = 125 o c 25 o c -55 o c may 10,2010-rev.01
fig. 7 gate charge waveform PJP8N60 / pjf8n60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage 0.8 0 .9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) t j - junction temperature ( o c ) i d = 250 a 0.01 0 .1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c 0 2 4 6 8 1 0 12 0 5 10 15 20 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 8a v d s =480v v d s =300v v d s =120v fig. 7 gate charge waveform PJP8N60 / pjf8n60 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature page. 4 0.8 0 .9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) t j - junction temperature ( o c) i d = 250 a 0.01 0 .1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v -55 o c 0 2 4 6 8 1 0 12 0 5 10 15 20 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d = 8a v d s =480v v d s =300v v d s =120v may 10,2010-rev.01
page . 5 PJP8N60 / pjf8n60 copyright panjit international, inc 2010 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement may 10,2010-rev.01
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